Here is why gallium nitride (GaN) is the natural successor to silicon MOSFETs in the 100–650 V class of power devices.
Abstract: The p-type gate gallium nitride high-electron-mobility transistors (p-GaN HEMTs) have been the subject of aggressive research in the power semiconductor community, while there have also been ...
Abstract: A novel structure using p-doped polysilicon with a new program/erase scheme is proposed for the first time in this paper to enhance erase performance in amorphous indium gallium zinc oxide ...
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