The physicist William Shockley is perhaps today best known for three things: his role in the invention of the transistor, his calamitous management of Shockley Semiconductor which led to a mass ...

SBDs (Schottky barrier diodes) enable fast switching and low forward voltage drop in high-efficiency power designs. Silicon carbide (SiC) power devices offer high efficiency and optimal performance in ...

Abstract: We investigate the leakage current density–voltage (J–V) characteristics and gettering behavior of metallic impurities using a pn-junction diode fabricated with hydrocarbon ...

Vertical GaN power devices could benefit from better p-type contacts, realised by magnesium implantation and ultra-high-pressure annealing Engineers from North Carolina State University, Adroit ...

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The semiconductor industry consumes staggering amounts of electricity annually, surpassing the energy usage of over 100 nations. This immense consumption not only underscores the environmental impact ...

For power measurements in wireless telephony and high-speed data communication systems, the Schottky diode is the predominant choice. Current and voltage are indeed important, but power gives us a ...

1 Department of Physics, College of Science, Qassim University, Buraidah, Saudi Arabia. 2 Laboratoire de Microélectronique et Instrumentation (UR 03/13-04), Faculté des Sciences de Monastir, Monastir, ...

GaN-based vertical P-i-N diode with mesa edge terminal structure due to electric field crowding effect, the breakdown voltage of the device is significantly reduced. This work investigates three ...

Diodes are among the simplest but most useful semiconductor devices used in a broad range of applications today. They are basically two-terminal components that allow an electric current to flow in ...